TN22 ? april 1995 startlight symbol parameter value unit v drm repetitive peak off-state voltage t j = 110 c 400 v i t(rms) rms on-state current full sine ware (180 conductionangle) tc= 95 c2 a i t(av) mean on-state current full sine ware (180 conductionangle) tc= 95 c 1.8 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3ms 22 a tp = 10ms 20 i 2 ti 2 t value for fusing tp = 10ms 2 a 2 s di/dt critical rate of rise of on-state current i g = 5 ma di g /dt = 70 ma/ m s. 50 a/ m s t stg t j storage and operating junction temperature range - 40 to + 150 - 40 to + 110 c tl maximum lead temperature for soldering during 10s at 4.5mm from case 260 c absolute ratings (limiting values) to220ab (plastic) v br : 1200 - 1500 v and 1000 - 1600 v versions i h > 175 ma i gt < 1.5 ma features the TN22 is an high performance asymetrical scr in high voltage pnpn diffused planar tech- nology. package either in to220ab, sot 82 or sot 194, these parts are intended for use in electronic description sot 82 (plastic) sot 194 (plastic) k a g 1/7
p g(av) = 300 mw p gm =2w(tp=20 m s) i fgm = 1 a (tp = 20 m s) v rgm =6v gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient to220ab 60 c/w sot 82 / sot 194 100 rth(j-c) junction to case 3 c/w thermal resistances symbol test conditions type value unit i gt v d =12v (dc) r l =33 w tj= 25 c max 1.5 ma v gt v d =12v (dc) r l =33 w r gk =1k w tj= 25 c max 3 v i h v gk = 0v tj= 25 c min 175 ma v tm i tm = 2a tp= 380 m s tj= 25 c max 3.1 v i drm v drm rated tj= 25 c max 0.1 ma dv/dt linear slope up to v d =67%v drm v gk =0v tj= 110 c min 500 v/ m s electrical characteristics ordering information t n 2 2 - xxxx x thyristor family symbol test conditions suffix unit TN22-1500 TN22-1600 v br i d = 5ma v gk =0v tj = 25 c min 1200 1000 v max 1500 1600 v starlight packages t : to220ab d : sot 82 k : sot 194 v br max 1500 : 1500 v 1600 : 1600v i gt max 2 : 1.5 ma i t(rms) max 2:2a ? TN22 2/7
basic application diagram TN22 r s controler (timer) start er circuit inductance ballast fluorescent tube 220 v av voltag e this thyristor has been designed for use as a fluo- rescent tube starter switch. au electronic starter circuit provides : a pre-heating period during which a heating current is applied to the cathode heaters. one or several high voltage striking pulses across the lamp. principle of operation 1/ pre-heating at rest the switch s is opened and when the mains voltage is applied across the circuit a full wave rec- tified current flows through the resistor r and the TN22 gate : at every half-cycle when this current reaches the gate triggering current (i gt ) the thyris- tor turns on. when the device is turned-on the heating current, limited by the ballast choke, flows through the tube heaters. the pre-heating time is typically 2 or 3 seconds. 2/ pulsing at the end of the pre-heating phase the switch s is turned on. at this moment : if the current through the devices is higher than the holding current (i h ) the thyristor remains on until the current falls (below i h ). then the thyristor turns off. if the current is equal or lower than the holding cur- rent the thyristor turns off the instantaneously. when the thyristor turns off the current flowing through the ballas choke generates a high voltage pulse. this overvoltage is clamped by the thyristor avalanche characteristic (v br ). if the lamp is not struck after the first pulse, the sys- tem starts a new ignition sequence again. 3/ steady state when the lamp is on the running voltage is about 150v and the starter switch is in the off-state. implementation the resistor r must be chosen to ensure a proper triggering in the worst case (minimum operating temperature) according to the specified gate trig- gering current and the peak line voltage. switch s : this function can be realized with a gate sensitive scr type : p0130aa... this component is a low voltage device (< 50v) and the maximum current sink through this switch can reach the level of the thyristor holding current. the pre-heating period can be determined by the time constant of a capacitor-resistor circuit charged by the voltage drop of diodes used in se- ries in the thyristor cathode. ? TN22 3/7
t(av) i (a) = 180 o = 120 o =60 o =30 o =90 o 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 2 1 t(av) p (w) 0 0 1 2 3 4 5 6 fig.1 : maximum average power dissipation ver- sus average on-state current (rectified full sine wave). 10 20 30 40 50 60 70 80 90 100 110 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 tcas e ( c) o t(av) i (a) = 180 o fig.3 : average on-state current versus case tem- perature (rectified full sine wave). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 igt tj( c) o ih -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 0 1 2 3 4 5 6 = 180 o tcase ( c) o rth=12 c/w o rth=8 c/w o rth=4 c/w o rth=0 c/w o 10 20 30 40 50 60 70 80 90 100 110 t(av) p (w) fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb and tcase) for different thermal resistances heatsink + contact. 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e-01 1.0e+00 1.0e+01 1.0e+02 zth(j-a)(oc/w) tp(s) fig.4 : thermal transient impedance junction to ambient versus pulse duration. 1 10 100 1000 0 2 4 6 8 10 12 14 16 18 20 tj initial = 25 c f=50hz o number of cycles i (a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. ? TN22 4/7
i (a). i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t 100 10 10 1 1 fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 0.1 110 20 0 1 2 3 4 5 6 7 8 v (v) tm i(a) tm tj=25 c o tj=110 c o tj=110 c vto =2.50v rt =0.235 o fig.8 : on-state characteristics (maximum values). 1 10 100 1000 1 10 100 500 rgk( ) i(ma) h tj=25 c o fig.9 : relative variation of holding current versus gate-cathode resistance (typical values). i (a) t(rms) tp(s) 0.1 110100 11 10 9 8 7 6 5 4 3 2 1 tc initial = 25 c o tc initial = 45 c o tc initial = 65 c o fig.10 : maximum allowable rms current versus time conduction and initial case temperature (package : sot 82). note : calculation made fot tj max = 135 c (the failure mode will be short circuit) ? TN22 5/7
package mechanical data to220ab (plastic) ref. dimensions millimeters inches min. max. min. max. a 10.0 10.4 0.393 0.409 b 15.2 15.9 0.598 0.626 c 13 14 0.511 0.551 d 6.2 6.6 ? ? ? ? ? 0.244 0.260 e 16.4 typ. 0.645 typ. f 3.5 4.2 0.137 0.165 g 2.65 2.95 0.104 0.116 h 4.4 4.6 0.173 0.181 i 3.75 3.85 0.147 0.151 j 1.23 1.32 0.048 0.051 k 1.27 typ. 0.050 typ. l 0.49 0.70 0.019 0.027 m 2.4 2.72 0.094 0.107 n 4.95 5.15 0.194 0.203 n1 2.40 2.70 0.094 0.106 o 1.14 1.70 0.044 0.067 p 0.61 0.88 0.024 0.034 package mechanical data sot 82 (plastic) h d e g l f m ca b ref. dimensions millimeters inches min. max. min. max. a 7.4 7.8 0.291 0.307 b 10.5 10.8 0.413 0.425 c 2.4 2.7 0.094 0.106 d 0.7 0.9 0.027 0.035 e 2.2 typ. 0.087 typ. f 0.49 0.75 0.019 0.029 g 4.15 4.65 0.163 0.183 h (1) 2.54 0.100 l 15.7 typ. 0.618 typ. m 1.0 1.3 0.039 0.051 (1) within this region the cross-section of the leads is uncontrolled marking : type number weight : 0.72 g cooling method : c marking : type number weight : 2 g recommended torque values : 5.5 m.n. maximum torque values : 0.70 m.n. ? TN22 6/7
package mechanical data sot 194 (plastic) d e g o f l n m ca b i ref. dimensions millimeters inches min. max. min. max. a 7.4 7.8 0.291 0.307 b 10.5 10.8 0.413 0.425 c 2.4 2.7 0.094 0.106 d 0.7 0.9 0.027 0.035 e 2.2 typ. 0.087 typ. f 0.49 0.75 0.019 0.020 g 4.15 4.65 0.163 0.183 i 1.3 typ. 0.051 typ. l 0.1 typ. 0.004 typ. m 4 typ 0.158 typ n 2 typ. 0.078 typ. o 6 typ. 0.236 typ. a 45 45 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. marking : type number weight : 0.68 g 6.7 8.5 3.5 4.5 1 1.2 foot print ? TN22 7/7
|
